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| Data Sheet No. PD60029-I IR2155 Features * Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Undervoltage lockout Programmable oscillator frequency (NOTE: For new designs, we recommend IR's new products IR2153 and IR21531) SELF-OSCILLATING HALF-BRIDGE DRIVER Product Summary VOFFSET Duty Cycle IO+/VOUT Deadtime (typ.) 600V max. 50% 210 mA / 420 mA 10 - 20V 1.2 s * * f= * Matched propagation delay for both channels * Micropower supply startup current of 125 A typ. * Low side output in phase with RT 1 1.4 x (RT + 150) x CT Package Description The IR2155 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high pulse current buffer stage and an internal deadtime designed for minimum driver cross-conduction. Propagation delays for the two channels are matched to simplify use in 50% duty cycle applications. The floating channel can be used to drive an N-channel power 8 Lead PDIP MOSFET or IGBT in the high side configuration that operates off a high voltage rail up to 600 volts. Typical Connection up to 600V VCC RT CT COM VB HO VS LO TO LOAD (Refer to Lead Assignment diagram for correct pin configuration) www.irf.com 1 IR2155 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol VB VS VHO VLO VRT VCT ICC IRT dVs/dt PD RJA TJ TS TL Parameter Definition High Side Floating Supply Voltage High Side Floating Supply Offset Voltage High Side Floating Output Voltage Low Side Output Voltage RT Voltage CT Voltage Supply Current (Note 1) RT Output Current Allowable Offset Supply Voltage Transient Package Power Dissipation @ TA +25C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds) (8 Lead DIP) (8 Lead SOIC) (8 Lead DIP) (8 Lead SOIC) Value Min. -0.3 VB - 25 VS - 0.3 -0.3 -0.3 -0.3 -- -5 -- -- -- -- -- -- -55 -- Max. 625 VB + 0.3 VB + 0.3 VCC + 0.3 VCC + 0.3 VCC + 0.3 25 5 50 1.0 0.625 125 200 150 150 300 Units V mA V/ns W C/W C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. Symbol VB VS VHO VLO ICC TA Note 1: Parameter Definition High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Output Voltage Low Side Output Voltage Supply Current (Note 1) Ambient Temperature Value Min. VS + 10 -- VS 0 -- -40 Max. VS + 20 600 VB VCC 5 125 Units V mA C Because of the IR2155's application specificity toward off-line supply systems, this IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value resistor connected between the chip VCC and the rectified line voltage and a local decoupling capacitor from VCC to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC, low impedance power source of greater than VCLAMP . 2 www.irf.com IR2155 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 12V, CL = 1000 pF and TA = 25C unless otherwise specified. Symbol tr tr DT D Parameter Definition Turn-On Rise Time Turn-Off Fall Time Deadtime RT Duty Cycle Value Min. Typ. Max. Units Test Conditions -- -- 0.50 48 80 40 1.20 50 120 70 2.25 52 ns s % Static Electrical Characteristics VBIAS (VCC, VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol fOSC VCLAMP VCT+ VCTVCTUV VRT+ VRTVRTUV VOH VOL ILK IQBS IQBSUV IQCC IQCCUV ICT VBSUV+ VBSUVVBSUVH VCCUV+ VCCUVVCCUVH IO+ IO- Parameter Definition Oscillator Frequency VCC Zener Shunt Clamp Voltage 2/3 VCC Threshold 1/3 VCC Threshold CT Undervoltage Lockout RT High Level Output Voltage, VCC - RT RT Low Level Output Voltage RT Undervoltage Lockout, VCC - RT High Level Output Voltage, VBIAS - VO Low Level Output Voltage, VO Offset Supply Leakage Current Quiescent VBS Supply Current Micropower VBS Supply Startup Current Quiescent VCC Supply Current Micropower VCC Supply Startup Current CT Input Current VBS Supply Undervoltage Positive Going Threshold VBS Supply Undervoltage Negative Going Threshold VBS Supply Undervoltage Lockout Hysteresis VCC Supply Undervoltage Positive Going Threshold VCC Supply Undervoltage Negative Going Threshold VCC Supply Undervoltage Lockout Hysteresis Output High Short Circuit Pulsed Current Output Low Short Circuit Pulsed Current Value Min. Typ. Max. Units Test Conditions 19.4 94 14.4 7.8 3.8 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.7 7.3 100 7.7 7.4 200 210 420 20.0 100 15.6 8.0 4.0 20 0 200 20 200 0 -- -- -- 70 55 500 70 0.001 8.4 8.1 400 8.4 8.1 400 250 500 20.6 106 16.8 8.2 4.2 50 100 300 50 300 100 100 100 50 150 125 1000 150 1.0 9.2 8.9 -- 9.2 8.9 -- -- -- kHz RT = 35.7 k RT = 7.04 k ICC = 5 mA V 2.5V < VCC < VCCUV IRT = -100 A IRT = -1 mA IRT = 100 A IRT = 1 mA 2.5V < VCC < VCCUV IO = 0A IO = 0A VB = VS = 600V mV A V mV V mV mA VO = 0V VO = 15V www.irf.com 3 IR2155 Functional Block Diagram VB R RT + R + R UV DETECT R S Q Q VCC 15.6V DEAD TIME LO HV LEVEL SHIFT UV DETECT PULSE FILTER R R S Q HO DEAD TIME PULSE GEN VS CT DELAY COM Lead Definitions Lead Symbol Description RT CT Oscillator timing resistor input,in phase with LO for normal IC operation Oscillator timing capacitor input, the oscillator frequency according to the following equation: f= VB HO VS VCC LO COM 1 1.4 x (RT + 150) x CT where 150 is the effective impedance of the RT output stage High side floating supply High side gate drive output High side floating supply return Low side and logic fixed supply Low side gate drive output Low side return Lead Assignments 8 Lead DIP IR2155 4 www.irf.com IR2155 8 Lead PDIP 01-3003 01 www.irf.com 5 IR2155 VCCUV+ VCC VCLAMP RT (HO) RT CT 50% 50% RT (LO) tr tf 90% 90% HO LO LO HO Figure 1. Input/Output Timing Diagram 10% 10% Figure 2. Switching Time Waveform Definitions RT 50% 50% 90% HO LO 90% 10% DT 10% Figure 3. Deadtime Waveform Definitions WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 http://www.irf.com/ Data and specifications subject to change without notice. 3/29/2001 6 www.irf.com |
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